- conduction-to valence band tunneling
- conduction-to valence band tunneling ME Leitungsband-Valenzband-Tunnelung f
English-German dictionary of Electrical Engineering and Electronics. 2013.
conduction-to valence band tunneling
Schlagen Sie auch in anderen Wörterbüchern nach:
Band gap — This article is about solid state physics. For voltage control circuitry in electronics, see Bandgap voltage reference. In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron… … Wikipedia
Electrical conduction — is the movement of electrically charged particles through a transmission medium (electrical conductor). The movement of charge constitutes an electric current. The charge transport may result as a response to an electric field, or as a result of… … Wikipedia
Graphene — is a one atom thick planar sheet of sp2 bonded carbon atoms that are densely packed in a honeycomb crystal lattice. It can be viewed as an atomic scale chicken wire made of carbon atoms and their bonds. The name comes from GRAPHITE + ENE;… … Wikipedia
Resonant tunnelling diode — A resonant tunnel diode (RTD) is a device which uses quantum effects to produce negative differential resistance (NDR). As an RTD is capable of generating a terahertz wave at room temperature, it can be used in ultra high speed circuitry.… … Wikipedia
Semiconductor — Citations missing|date=March 2008A semiconductor is a solid material that has electrical conductivity in between a conductor and an insulator; it can vary over that wide range either permanently or dynamically. [. They are used in many… … Wikipedia
Heterojunction — A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the… … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Si/SiGe resonant tunnel diode — A Si/SiGe resonant tunnel diode is a resonant tunnel diode based on Si/SiGe heterojunctions. Both hole tunneling and electron tunneling have been observed. But the performance of Si/SiGe resonant tunnel diode is limited mainly because of the… … Wikipedia
Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… … Wikipedia
Multijunction photovoltaic cell — Multi junction solar cells or tandem cells are solar cells containing several p n junctions. Each junction is tuned to a different wavelength of light, reducing one of the largest inherent sources of losses, and thereby increasing efficiency.… … Wikipedia
Tunnel diode — A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave frequency region, by using quantum mechanical effects. It was invented in 1958 by Leo Esaki, who in 1973 received the… … Wikipedia
